X1G0048010039 SG2016CAN 26MHZ CMOS -40+105愛(ài)普生編程晶振全硅MEMS振蕩器詳細(xì)介紹
X1G0048010039 SG2016CAN 26MHZ CMOS -40+105愛(ài)普生編程晶振全硅MEMS振蕩器詳細(xì)介紹
MEMS振蕩器市場(chǎng)前景
據(jù)行業(yè)猜測(cè)微機(jī)電體系振蕩器正以120％的年增加率替代石英振蕩器,還有的猜測(cè)微機(jī)電體系振蕩器是將以四倍的年增加率增加.X1G0048010039編程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,愛(ài)普生全硅MEMS振蕩器
從對(duì)微機(jī)電體系上漲的行情猜測(cè)超越了前期對(duì)微機(jī)電體系芯片年增加為30％的猜測(cè).
據(jù)介紹在消費(fèi)電子和自動(dòng)化愛(ài)普生晶振電子產(chǎn)品微型化出產(chǎn)及在單CMOS芯片上多振蕩器片上體系MEMS的驅(qū)動(dòng)下,現(xiàn)有的250萬(wàn)美元的MEMS振蕩器商場(chǎng)在2012年將增加到140萬(wàn)美元.2012年之后,MEMS振蕩器將在手機(jī)守時(shí)芯片方面到達(dá)10億美元的市場(chǎng)價(jià)值.
全硅MEMS振蕩器的制作方法及其長(zhǎng)處：
MEMS振蕩器是由兩顆芯片；一為全硅MEMS諧振器,一為具溫補(bǔ)功用之發(fā)動(dòng)電路暨鎖相環(huán)CMOS芯片；運(yùn)用規(guī)范半導(dǎo)體芯片MCM封裝方法完結(jié).
2.MEMS出產(chǎn)制程,采全自動(dòng)化規(guī)范半導(dǎo)體制作流程；與出產(chǎn)線上人工本質(zhì)無(wú)關(guān).如一切今天在一切電子產(chǎn)品規(guī)劃內(nèi)所運(yùn)用的IC一般；具有優(yōu)秀的穩(wěn)定性以及質(zhì)量；不易在出產(chǎn)進(jìn)程中呈現(xiàn)人為失誤.
3.支撐頻率、精度、電壓可編程；可滿(mǎn)意客戶(hù)不同規(guī)范組合之轟動(dòng)器需求.
4.支撐一切業(yè)界規(guī)范封裝(7050,5032,3225,2520),一切規(guī)范產(chǎn)品交貨期僅需2~4周.
5.MEMS振蕩器封裝無(wú)密封問(wèn)題,規(guī)范MCM封裝,防震性達(dá)石英產(chǎn)品的25倍.出貨不良率低于1dppm.
6.MEMS振蕩器內(nèi)部起振鎖相環(huán)芯片,具有溫補(bǔ)功用；頻率精度相對(duì)于溫度的改動(dòng)為線性聯(lián)系,規(guī)范所標(biāo)明的頻率精度包括轟動(dòng)頻偏、溫度頻偏、老化頻偏等.
7.MEMS產(chǎn)品之質(zhì)量一致性乃透過(guò)規(guī)劃階段完結(jié)；與石英產(chǎn)品在量產(chǎn)階段操控質(zhì)量之制作控管方法不同,體系廠商無(wú)須憂慮來(lái)料與量產(chǎn)樣品認(rèn)證之不一致性.
特征
晶體振蕩器
頻率：20個(gè)標(biāo)準(zhǔn)頻率
（4MHZ至72MHZ）
輸出：CMOS
電源電壓：1.6 V 至 3.63 V
工作溫度：-20 °C 至 +70 °C
-40 °C 至 +105 °C
應(yīng)用
物聯(lián)網(wǎng)、可穿戴設(shè)備
數(shù)據(jù)中心、倉(cāng)儲(chǔ)
醫(yī)療、工業(yè)自動(dòng)化X1G0048010039編程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,愛(ài)普生全硅MEMS振蕩器
愛(ài)普生的SGxxxxCAN和SG-210STF是具有CMOS輸出的簡(jiǎn)單封裝晶體振蕩器（SPXO）系列。
頻率 MHZ
頻率公差/工作溫度
.DB
JG
JH
±25 × 10-6
-20 ºC 至 +70 ºC
±50 × 10-6
-40 ºC 至 +85 ºC
±50 × 10-6
-40 ºC 至 +105 ºC
4
-
X1G004801003000
X1G004801004900
8
-
X1G004801004500
X1G004801004600
10
-
X1G004801002900
X1G004801002700
12
X1G004801005000
X1G004801000700
X1G004801005100
12.288
X1G004801005200
X1G004801004400
X1G004801005300
14.7456
-
X1G004801005400
X1G004801005500
16
-
X1G004801001400
X1G004801005600
20
X1G004801005700
X1G004801005800
X1G004801001800
24
X1G004801005900
X1G004801000200
X1G004801004000
24.576
-
X1G004801006000
X1G004801003100
25
X1G004801001200
X1G004801003500
26
-
X1G004801000300
X1G004801003900
27
-
X1G004801006100
X1G004801002100
32
-
X1G004801006200
X1G004801006300
33.33
-
X1G004801006400
X1G004801006500
33.3333
-
X1G004801002600
X1G004801006600
40
-
X1G004801006700
X1G004801003600
48
X1G004801006800
X1G004801002000
X1G004801006900
50
X1G004801007000
X1G004801001300
X1G004801002800
72
X1G004801007100
X1G004801007200
X1G004801007300
這些 SPXO 非常適合物聯(lián)網(wǎng)、晶振廠家可穿戴設(shè)備、醫(yī)療、工業(yè)自動(dòng)化等各種應(yīng)用。這些 SPXO 具有低電流消耗、1.6 V 至 3.63 V 的寬工作電壓和 -40 °C 至 85 °C 的寬工作溫度范圍，此外還可提供高達(dá) 105 °C 的工作溫度。
這些 SPXO 提供五種不同的封裝尺寸，從 2.0 × 1.6 mm 到 7.0 × 5.0 mm，并提供標(biāo)準(zhǔn)引腳輸出。
Frequency Part number
[MHz] SG7050CAN (7.0 x 5.0) SG5032CAN (5.0 x 3.2) SG3225CAN (3.2 x 2.5)
±25 ppm ±50 ppm ±50 ppm ±25 ppm ±50 ppm ±50 ppm ±25 ppm ±50 ppm ±50 ppm
-20 to +70 °C -40 to +85 °C -40 to +105 °C -20 to +70 °C -40 to +85 °C -40 to +105 °C -20 to +70 °C -40 to +85 °C -40 to +105 °C
(Grade: TDB) (Grade: TJG) (Grade: TJH/KJH) (Grade: TDB) (Grade: TJG) (Grade: TJH/KJH) (Grade: TDB) (Grade: TJG) (Grade: TJH/KJH)
4 - X1G004481005100 X1G004481025200 - X1G004451003400 X1G004451019600 - X1G005961001115 X1G005961001215 8 - X1G004481001400 X1G004481025300 - X1G004451002100 X1G004451019700 - X1G005961000415 X1G005961001315 10 - X1G004481000500 X1G004481025400 - X1G004451001300 X1G004451017800 - X1G005961000515 X1G00596100141512 X1G004481025500 X1G004481000600 X1G004481025600 X1G004451019800 X1G004451002800 X1G004451019900 X1G005961001515 X1G005961000615 X1G00596100161512.288 X1G004481025700 X1G004481000100 X1G004481025800 X1G004451020000 X1G004451000100 X1G004451020100 X1G005961001715 X1G005961001815 X1G00596100191514.7456 - X1G004481002500 X1G004481025900 - X1G004451001900 X1G004451020200 - X1G005961002015 X1G005961002115 16 - X1G004481000700 X1G004481026000 - X1G004451000200 X1G004451020300 - X1G005961002215 X1G00596100231520 X1G004481012800 X1G004481000800 X1G004481026100 X1G004451020400 X1G004451001100 X1G004451020500 X1G005961002415 X1G005961000715 X1G00596100251524 X1G004481002200 X1G004481000200 X1G004481026200 X1G004451017200 X1G004451000300 X1G004451020600 X1G005961002615 X1G005961000115 X1G005961002715 24.576 - X1G004481001600 X1G004481026300 - X1G004451002900 X1G004451020700 - X1G005961000815 X1G00596100281525 X1G004481011600 X1G004481000300 X1G004481026400 X1G004451009700 X1G004451000400 X1G004451020800 X1G005961002915 X1G005961000215 X1G00596100301526 - X1G004481003500 X1G004481026500 - X1G004451008200 X1G004451020900 - X1G005961003115 X1G00596100321527 - X1G004481000400 X1G004481026600 - X1G004451000500 X1G004451021000 - X1G005961003315 X1G00596100341532 - X1G004481000900 X1G004481026700 - X1G004451001400 X1G004451021100 - X1G005961003515 X1G00596100361533.33 - X1G004481017900 X1G004481026800 - X1G004451021200 X1G004451021300 - X1G005961003715 X1G005961003815
33.3333 - X1G004481003300 X1G004481026900 - X1G004451016700 X1G004451021400 - X1G005961003915 X1G005961004015 40 - X1G004481001500 X1G004481027000 - X1G004451001200 X1G004451021500 - X1G005961000915 X1G00596100411548 X1G004481022600 X1G004481001100 X1G004481027100 X1G004451014900 X1G004451000700 X1G004451011200 X1G005961004215 X1G005961000315 X1G00596100431550 X1G004481011200 X1G004481001200 X1G004481016000 X1G004451011500 X1G004451000800 X1G004451003600 X1G005961004415 X1G005961001015 X1G00596100451572 X1G004481027200 X1G004481018300 X1G004481027300 X1G004451021600 X1G004451021700 X1G004451021800 X1G005961004615 X1G005961004715 X1G005961004815
MEMS振蕩器與石英振蕩器比較
MEMS振蕩器以其杰出的特性,被認(rèn)為是傳統(tǒng)的石英振蕩器的替代產(chǎn)品.
石英轟動(dòng)器一般制作的方法及其缺陷：X1G0048010039編程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,愛(ài)普生全硅MEMS振蕩器
1.石英產(chǎn)品交貨周期長(zhǎng).因?yàn)槌霎a(chǎn)所需質(zhì)料需來(lái)自于不同供貨商；包含芯片廠、基座廠商、石英晶棒廠商,以及廠內(nèi)的切開(kāi)設(shè)備、出產(chǎn)職工等資源均會(huì)影響交貨周期.一般來(lái)說(shuō),在廠內(nèi)以及、出售途徑無(wú)庫(kù)存情況下,交貨周期由6~12周.而一般非常用、有源晶振很多出產(chǎn)之產(chǎn)品,其訂購(gòu)周期長(zhǎng)達(dá)8～16周.交貨周期不定：因?yàn)槌霎a(chǎn)工序雜亂；任何一道工序發(fā)生過(guò)錯(cuò),該批出產(chǎn)均需從頭來(lái)過(guò)；形成交期重置.
2.石英產(chǎn)品密封不易確保；形成頻率誤差.石英切開(kāi)后需鍍上水銀,其全體厚度決議了起振的頻率.封裝時(shí)需將內(nèi)部以氮?dú)馓畛?span>,堅(jiān)持與空氣阻隔以防止內(nèi)部質(zhì)料氧化,形成頻率改動(dòng).或因封裝不良、或因轟動(dòng)；均可能對(duì)外觀密封質(zhì)量改動(dòng),即所謂漏氣.一般漏氣可能發(fā)生在石英廠出廠前的檢測(cè)；或到體系廠后出產(chǎn)完結(jié)測(cè)驗(yàn)發(fā)現(xiàn)頻率偏移、或體系廠商出產(chǎn)測(cè)驗(yàn)完結(jié)出貨后在客戶(hù)端發(fā)生不良.（類(lèi)舉：如輪胎被釘子刺穿后,灰心時(shí)刻不等）
3.石英產(chǎn)品的防震性不良.石英本身易碎、怕摔.石英與起振芯片結(jié)合時(shí)所選用的點(diǎn)膠方法,以及運(yùn)用的質(zhì)料均會(huì)對(duì)轟動(dòng)器封裝的穩(wěn)定性、一致性具有必定的影響.防震性不良,形成貨運(yùn)進(jìn)程可能有到貨不良、SMT打件損耗等.
4.石英產(chǎn)品的頻率精度與溫度聯(lián)系非線性聯(lián)系（或稱(chēng)溫飄；一般為向下拋物線）.一般石英產(chǎn)品規(guī)范書(shū)上標(biāo)明的頻率穩(wěn)定度（或精度）；一般為在25℃室溫；除此之外,還有所謂”溫飄”.因?yàn)槠浞蔷€性的聯(lián)系,體系廠商在實(shí)驗(yàn)室測(cè)驗(yàn)內(nèi)測(cè)驗(yàn)的精度,甚或運(yùn)用凹凸溫測(cè)驗(yàn)到的石英轟動(dòng)器規(guī)范,并無(wú)法確保石英廠商在量產(chǎn)交貨階段所交給廠商的元件均能契合其要求的規(guī)范.因?yàn)榉蔷€性石英對(duì)溫度的特性,使得石英產(chǎn)品在物料進(jìn)廠查驗(yàn)時(shí)變得無(wú)所根據(jù),直到上線測(cè)驗(yàn),才有時(shí)機(jī)判別來(lái)料的質(zhì)量.有時(shí)候因?yàn)槭①|(zhì)料的不良,在體系廠商SMD進(jìn)程中通過(guò)回流銲（無(wú)鉛制程高達(dá)260℃）制程時(shí)也會(huì)對(duì)石英形成質(zhì)變,使得轟動(dòng)器的頻率發(fā)生偏移.
5.不同頻率轟動(dòng)器；廠商需對(duì)石英貼片晶振做不同方法的切開(kāi)、不同頻率起振的方法也需調(diào)配不同的芯片,支撐的電壓不同、或許需求的顫動(dòng)、精度規(guī)范不同,轟動(dòng)器內(nèi)部調(diào)配的起振芯片均不同.
一切石英廠商建廠后,除非增加出產(chǎn)線,不然出產(chǎn)產(chǎn)能固定；供貨有限.一切石英廠無(wú)法針對(duì)一切規(guī)范的轟動(dòng)器預(yù)備出產(chǎn)線或具有出產(chǎn)規(guī)模；因而一般來(lái)說(shuō)；單個(gè)廠商僅針對(duì)某些規(guī)范產(chǎn)品出產(chǎn),形成體系廠商客戶(hù)不行能選用的收購(gòu)方針.即便體系廠商方針是減縮同類(lèi)型產(chǎn)品的供貨商,但因?yàn)槭a(chǎn)品的特別性,以及其出產(chǎn)工藝上的約束,廠商的方針假如停留在僅對(duì)現(xiàn)有石英供貨商之間收購(gòu)絕無(wú)法到達(dá)；而SITIME的全硅可編程轟動(dòng)器,從規(guī)劃、出產(chǎn)上的根本性革新,具有供給廠商的條件.因?yàn)椴恍心転榭蛻?hù)廠商不同需求轟動(dòng)器備料齊全,石英廠商間普遍存在同業(yè)調(diào)貨情況,即不同石英出產(chǎn)廠商透過(guò)同一品牌交貨給體系廠商,調(diào)貨交貨也意味著質(zhì)量控管的空窗.因而一些體系廠商嚴(yán)正規(guī)則協(xié)作石英廠商不得有調(diào)貨供貨情況；以防止此無(wú)法操控之質(zhì)量危險(xiǎn).
6.一般來(lái)說(shuō),石英廠商所做的作業(yè)為石英切開(kāi)、與日系廠商購(gòu)買(mǎi)基座、起振芯片；將石英以及芯片以特別黏膠結(jié)合后至于基座上,并進(jìn)行填充氮?dú)饷芊?span>.數(shù)十道繁復(fù)工序；且需求很多人工參加量產(chǎn)制作、質(zhì)量管理.絕大部分石英廠商常見(jiàn)或偶見(jiàn)廠內(nèi)出產(chǎn)控管不良形成之產(chǎn)品污染、密封不良形成漏氣（使頻率違背規(guī)范）等不良現(xiàn)像.
X1G0048010039編程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,愛(ài)普生全硅MEMS振蕩器
MEMS振蕩器是指通過(guò)微機(jī)電體系（MEMS）制作出的一種可編程的硅振蕩器,MEMS振蕩器的溫度穩(wěn)定性也比傳統(tǒng)晶振更好,不受環(huán)境溫度凹凸改動(dòng)的影響.MEMS振蕩器歸于咱們一般所說(shuō)的有源晶振.它是對(duì)傳統(tǒng)石英晶振32.768K有源晶振產(chǎn)品的一個(gè)升級(jí)更新?lián)Q代,防震效果是前者的25倍,具有不受振蕩影響、不易碎的特色.MEMS振蕩器特色
與傳統(tǒng)石英比較,全硅MEMS振蕩器不論從出產(chǎn)工藝仍是組件規(guī)劃結(jié)構(gòu)上,都更契合現(xiàn)代電子產(chǎn)品的規(guī)范,也是對(duì)傳統(tǒng)石英產(chǎn)品的升級(jí)換代.*高性能模仿溫補(bǔ)技能使全硅MEMS振蕩器具有優(yōu)異的全溫頻率穩(wěn)定性,完全免除溫飄問(wèn)題；可編程的途徑為體系規(guī)劃和縮短新產(chǎn)品開(kāi)發(fā)周期供給必要的靈活性；完善的半導(dǎo)體出產(chǎn)鏈可讓全硅MEMS供貨期全面縮短,并提高需求應(yīng)急的才能；全自動(dòng)出產(chǎn)的IC結(jié)構(gòu)在質(zhì)量和可靠性方面有無(wú)可置疑的優(yōu)秀的一致性.
MEMS振蕩器的可靠性
頻率穩(wěn)定性特別是在不同溫度下的穩(wěn)定性,是電子工程師在挑選振蕩器時(shí)考慮的主要參數(shù)之一.因?yàn)槊恳粋€(gè)規(guī)劃都需求確保體系在整個(gè)作業(yè)溫度范圍內(nèi)正常運(yùn)作.而溫飄(頻率隨溫度而明顯改動(dòng)的現(xiàn)象)則是傳統(tǒng)石英產(chǎn)品的缺陷,難以單純從制作上戰(zhàn)勝.
MEMS振蕩器
深黑色曲線顯現(xiàn)出一個(gè)工業(yè)級(jí)-40℃-85℃石英振蕩器要到達(dá)全溫頻率穩(wěn)定性25PPM在技能上的難度.可以看到在凹凸溫的情況下,石英作為參閱時(shí)鐘其規(guī)劃余量較不充分,由此也增加了全體體系在工業(yè)級(jí)全溫發(fā)生不穩(wěn)定運(yùn)轉(zhuǎn)的可能性.
同時(shí)也顯現(xiàn)了各種顏色的平衡線,代表了110個(gè)discera全硅MEMS振蕩器在-40℃-85℃范圍內(nèi)的實(shí)際總頻差.與石英振蕩器比較,這些工業(yè)級(jí)MEMS振蕩器頻率穩(wěn)定性不但可堅(jiān)持在15PPM以下,其曲線更具有線性特征,為體系供給更大的規(guī)劃余量.
正因?yàn)槿?span>MEMS振蕩器運(yùn)用溫度補(bǔ)償?shù)募寄?span>,從振蕩器規(guī)劃上處理了石英溫飄的煩惱,因而電子工程師在選料時(shí)有了更大的地步.他們能夠挑選50PPM的MEMS振蕩器來(lái)替代許多25PPM的石英,既可滿(mǎn)意體系所需規(guī)范,又可降低成本.或許,他們可選用25PPM的MEMS振蕩器來(lái)提高體系全體穩(wěn)定性.
MEMS振蕩器結(jié)構(gòu)與作業(yè)原理
傳統(tǒng)的石英振蕩器是由壓電石英加上簡(jiǎn)略的起振芯片和有源晶振SPXO金屬封裝組成的,其出產(chǎn)工藝包含：石英切開(kāi)鍍銀、購(gòu)買(mǎi)基座、起振芯片,以及將石英及芯片以特別黏膠結(jié)合后至于基座上,然后充填氮?dú)?span>,用金屬封裝進(jìn)行密封.而不同頻率、不同作業(yè)電壓振蕩器的發(fā)生,則是由石英的不同形狀、鍍銀厚度及所佩的起振芯片所決議.所以從出產(chǎn)工藝角度,石英工業(yè)是一個(gè)人工密集型的半自動(dòng)化傳統(tǒng)工業(yè),其產(chǎn)品也遭到傳統(tǒng)原材料和工藝的約束：1.雜亂的出產(chǎn)程序?qū)е鹿┴浧诘耐祥L(zhǎng)及缺貨應(yīng)急困難的現(xiàn)象；2.不同振蕩器規(guī)范需不同質(zhì)料不同工藝,從而使制品缺少靈活性,無(wú)法為滿(mǎn)意不同運(yùn)用而進(jìn)行實(shí)時(shí)裝備；3.壓電石英對(duì)溫度敏感度高的特性,形成石英振蕩器的溫飄煩惱；4.石英易碎怕摔老化的缺陷需靠出產(chǎn)工藝和質(zhì)量管理來(lái)處理,缺少質(zhì)量和長(zhǎng)時(shí)刻可靠性的一致性.為處理石英的內(nèi)涵缺陷,因而在時(shí)鐘組件的選料上開(kāi)端轉(zhuǎn)向選用了全硅的產(chǎn)品結(jié)構(gòu),有一個(gè)全硅MEMS諧振器和一個(gè)可編程Analog CMOS驅(qū)動(dòng)芯片堆棧,并以規(guī)范QFNIC封裝方法完結(jié).
X1G0048010039編程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,愛(ài)普生全硅MEMS振蕩器
深圳市壹兆電子科技有限公司
編碼
型號(hào)
頻率
LxWxH/尺寸
輸出方式
電源電壓
工作溫度
頻率偏差
X1G0048010027
SG2016CAN
10.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010028
SG2016CAN
50.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010031
SG2016CAN
24.576000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010035
SG2016CAN
25.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010036
SG2016CAN
40.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010039
SG2016CAN
26.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010040
SG2016CAN
24.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010046
SG2016CAN
8.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010049
SG2016CAN
4.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010051
SG2016CAN
12.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010053
SG2016CAN
12.288000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010055
SG2016CAN
14.745600 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010056
SG2016CAN
16.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010063
SG2016CAN
32.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010065
SG2016CAN
33.330000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010066
SG2016CAN
33.333300 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010069
SG2016CAN
48.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010073
SG2016CAN
72.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
2.250 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010102
SG-8018CG
22.579200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010103
SG-8018CG
64.478100 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010104
SG-8018CG
59.737100 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010105
SG-8018CG
64.342677 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010106
SG-8018CG
43.540157 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010107
SG-8018CG
25.600000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010108
SG-8018CG
19.660800 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010110
SG-8018CG
85.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010111
SG-8018CG
63.055823 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010112
SG-8018CG
42.669354 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010122
SG-8018CG
74.250000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010123
SG-8018CG
13.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010124
SG-8018CG
20.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010129
SG-8018CG
12.568000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010130
SG-8018CG
6.940000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010131
SG-8018CG
3.072000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010132
SG-8018CG
6.780000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010133
SG-8018CG
13.560000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010134
SG-8018CG
27.120000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010135
SG-8018CG
4.096000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010136
SG-8018CG
54.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010139
SG-8018CG
7.372800 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010140
SG-8018CG
1.843200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010141
SG-8018CG
11.289600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010142
SG-8018CG
11.289600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010143
SG-8018CG
14.318180 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010144
SG-8018CG
3.686400 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010145
SG-8018CG
3.686400 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010146
SG-8018CG
49.152000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010147
SG-8018CG
4.194304 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010148
SG-8018CG
16.483200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010149
SG-8018CG
51.840000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010150
SG-8018CG
77.760000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010151
SG-8018CG
12.800000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010152
SG-8018CG
1.024000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010153
SG-8018CG
0.819200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010154
SG-8018CG
37.125000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010155
SG-8018CG
148.500000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010156
SG-8018CG
74.250000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010157
SG-8018CG
13.225600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010158
SG-8018CG
104.857600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010159
SG-8018CG
9.900000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010160
SG-8018CG
18.430000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010165
SG-8018CG
35.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010166
SG-8018CG
15.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010167
SG-8018CG
9.830400 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010168
SG-8018CG
9.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010169
SG-8018CG
2.097000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010170
SG-8018CG
6.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010171
SG-8018CG
11.059200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010172
SG-8018CG
9.900000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010173
SG-8018CG
12.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010174
SG-8018CG
33.500000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010175
SG-8018CG
3.570000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010176
SG-8018CG
8.037500 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010177
SG-8018CG
80.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010178
SG-8018CG
35.890700 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010180
SG-8018CG
72.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010181
SG-8018CG
72.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010182
SG-8018CG
75.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010183
SG-8018CG
75.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010184
SG-8018CG
49.152000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010185
SG-8018CG
98.304000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010186
SG-8018CG
98.304000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010187
SG-8018CG
37.125000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010188
SG-8018CG
33.330000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010189
SG-8018CG
33.330000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010190
SG-8018CG
18.432000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010191
SG-8018CG
18.432000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010192
SG-8018CG
7.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010193
SG-8018CG
8.727000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010194
SG-8018CG
21.606000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010195
SG-8018CG
39.321600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010196
SG-8018CG
41.140000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010197
SG-8018CG
49.500000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010198
SG-8018CG
6.553600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010199
SG-8018CG
64.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010200
SG-8018CG
8.050000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010201
SG-8018CG
1.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010204
SG-8018CG
8.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010205
SG-8018CG
4.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010206
SG-8018CG
40.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010207
SG-8018CG
41.010000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010208
SG-8018CG
0.910000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010209
SG-8018CG
69.200000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010210
SG-8018CG
32.768000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010211
SG-8018CG
58.982000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010212
SG-8018CG
155.520000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010213
SG-8018CG
65.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010214
SG-8018CG
130.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010215
SG-8018CG
16.384000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010216
SG-8018CG
5.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010217
SG-8018CG
4.410000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010222
SG-8018CG
22.956600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010223
SG-8018CG
78.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010224
SG-8018CG
16.777216 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010225
SG-8018CG
12.500000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010226
SG-8018CG
12.500000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010227
SG-8018CG
11.059200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010232
SG-8018CG
36.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010233
SG-8018CG
18.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010234
SG-8018CG
12.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010235
SG-8018CG
24.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010236
SG-8018CG
5.529600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010237
SG-8018CG
16.934000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010238
SG-8018CG
3.580000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010239
SG-8018CG
2.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010240
SG-8018CG
16.934000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010241
SG-8018CG
38.400000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010242
SG-8018CG
23.040000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010243
SG-8018CG
46.080000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010244
SG-8018CG
92.160000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010245
SG-8018CG
1.843200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
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